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Low phase noise buffer‐reused BiCMOS oscillator
Author(s) -
Lee HoChang,
Jang ShengLyang,
Chen YenHsun
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32867
Subject(s) - voltage controlled oscillator , phase noise , electrical engineering , dbc , amplifier , nmos logic , bicmos , figure of merit , materials science , electronic engineering , engineering , voltage , optoelectronics , cmos , transistor
This letter presents a lower phase noise voltage‐controlled oscillator (VCO) uses two differential amplifiers in cross‐coupled feedback and is named as a buffer‐reused VCO in the TSMC standard 0.18 μm SiGe BiCMOS processes. The die area is 1.1 × 1.2 mm 2 . The first amplifier uses HBT stacking on nMOSFET and the second amplifier uses nMOS amplifier. Its power consumption of 2.65 mW with output buffer current, the phase noise is −128.81 dBc/Hz at 1 MHz offset frequency from the center frequency 4.19 GHz. The figure of merit (FOM) is −194.08 dBc/Hz.
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