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High peak power passively Q‐switched 2 μm solid‐state laser based on a MoS 2 saturated absorber
Author(s) -
Gao Tianwen,
Zhang Rui,
Shi Zechang,
Jiang Ziyin,
Guo Ao,
Qiao Tianxu,
He Chenxi,
Wang Guoshui,
Yang Xiaotao,
Cui Jinhui
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32856
Subject(s) - materials science , laser , pulse (music) , solid state , chemical vapor deposition , power (physics) , q switching , optoelectronics , analytical chemistry (journal) , optics , chemistry , physics , quantum mechanics , detector , chromatography
A 2 μm passively Q‐switched Tm:YAP solid‐state laser with MoS 2 as saturated absorber was demonstrated in this work. MoS 2 two‐dimensional materials were prepared by using the method of chemical vapor deposition. The laser achieved high peak power of 21.2 W and high single pulse energy of 19.5 μJ, while maintaining a short pulse width of 916 ns. This is the first time that the peak power of a Tm:TAP solid‐state laser based on a MoS 2 saturated absorber has reached 21.2 W. The beam quality factor was M 2 x = 1.08 and M 2 y = 1.10.