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A high‐efficiency design for 5‐W 2.4/5.8 GHz concurrent dual‐band class‐E power amplifier
Author(s) -
Nguyen DangAn,
Seo Chulhun
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32712
Subject(s) - amplifier , stub (electronics) , impedance matching , resonator , multi band device , electrical impedance , dbm , electric power transmission , electronic engineering , electrical engineering , fundamental frequency , power added efficiency , harmonic , engineering , topology (electrical circuits) , rf power amplifier , physics , acoustics , cmos , antenna (radio)
In this letter, a distributed element‐based load network is proposed for designing a high‐efficiency dual‐band (DB) 5‐W Class‐E power amplifier (PA), at two widely spaced frequencies of 2.4 and 5.8 GHz. This network consists of two different stages. The first stage deploys a flexible network configuration with crossed transmission lines (TLINs) to provide concurrent DB fundamental matching in a closed‐form derivation, which transforms the standard resistance of 50 Ω directly to the optimal complex impedances. By tolerating the combination of the up‐side and down‐side TLINs, the size of the overall circuit as well as the implementation complexity are reduced. The second stage uses a DB TLIN‐based resonator preceded by a series 50 Ω stub to control the harmonic impedances without altering the fundamental impedances, ensuring high efficiency at the fundamental frequencies. The measured prototype shows highest power added efficiency (PAE) of around 62.9% and 61.7% with output power of about 39 and 35 dBm at 2.45 and 5.76 GHz, respectively.