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An improved 220‐GHz RF CMOS compact equivalent circuit model considering magnetic coupling effect
Author(s) -
Liu Xusheng,
Liu Jun,
Yu Yiming,
Zhao Chenxi,
Liu Huihua
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32706
Subject(s) - interconnection , cmos , transistor , radio frequency , coupling (piping) , substrate coupling , equivalent circuit , materials science , substrate (aquarium) , optoelectronics , electronic engineering , line (geometry) , electrical engineering , engineering , telecommunications , voltage , mathematics , oceanography , geometry , layer (electronics) , trench , metallurgy , composite material , geology
Abstract In this study, an improved RF CMOS transistor compact equivalent circuit model is presented. Due to the finite resistivity of the substrate, the magnetic coupling effect between the interconnection line and the substrate affects the signal propagation at mm‐wave frequency range. To characterize transistors in the terahertz band, a sophisticated network is introduced to represent the magnetic field of interconnection lines and substrate image current. In addition, the parameters of the proposed model are extracted by an analytical method. By comparison with the reported model, the proposed model can significantly improve the phase accuracy. The comparison of calculation results and experimental data shows that the proposed model can well characterize the transistor up to 220 GHz.