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Design of high‐efficiency continuous resistive‐reactive class‐J power amplifier
Author(s) -
Liu Guohua,
Zhao Zhong,
Cheng Zhiqun,
Li Sudong
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32686
Subject(s) - high electron mobility transistor , amplifier , harmonics , transistor , harmonic , wideband , power added efficiency , electronic engineering , electrical engineering , resistive touchscreen , power (physics) , electrical impedance , rf power amplifier , linear amplifier , octave (electronics) , engineering , physics , cmos , voltage , acoustics , quantum mechanics
This paper presents an ultra‐wideband, high‐efficiency continuous resistive‐reactive class‐J power amplifier. The design space is extended by controlling the second harmonic with impedance component and multiple harmonics of a continuous class‐J PA, enabling it to achieve efficient output in multiple octave bandwidths. Based on this theory, a GaN HEMT transistor CGH40010F is used to achieve a 0.6 to 3.2 GHz, average efficiency of 65%, ultra‐wideband PA with output power greater than 40 dBm. The simulation results are consistence with the measurement results and respond to the expectations.