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Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers
Author(s) -
AlShatravi Ali Gehad,
Abdullah Muaffak,
AlKhursan Amin Habbeb
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32671
Subject(s) - quantum dot , gallium nitride , optoelectronics , spontaneous emission , materials science , amplified spontaneous emission , rate equation , semiconductor , quantum well , amplifier , noise (video) , optical amplifier , physics , optics , laser , nanotechnology , quantum mechanics , cmos , layer (electronics) , artificial intelligence , computer science , kinetics , image (mathematics)
GaN/Al 0.5 Ga 0.5 N and InN/Al 0.5 Ga 0.5 N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these SOAs. GaN peaked at 351 nm which is preferred in optical coherence tomography applications. InN is peaked at 1028 nm which can be used in gas detection and environmental pollution monitoring. Both structures studied have high gain and low noise and nearly equivalent TE and TM gain which makes them adequate for the use in both these two modes. These calculations show the importance of InN and GaN QD nanostructure in the applications.