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Wideband microstrip‐to‐air‐filled substrate integrated waveguide transition with controllable band‐pass performance
Author(s) -
Liu Zhiqiang,
Wang Wenbo,
Sun Dongquan,
Deng JingYa
Publication year - 2020
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32478
Subject(s) - wideband , microstrip , materials science , bandwidth (computing) , fractional bandwidth , dielectric , microwave , optoelectronics , optics , frequency band , telecommunications , physics , engineering , resonator
A novel wideband back‐to‐back microstrip‐to‐air‐filled substrate integrated waveguide (AFSIW) transition with controllable band‐pass performance is presented. The wideband transition is constructed by a gradient microstrip and a section of widened partially dielectric‐filled AFSIW. The sharp rejection performance above the pass band is achieved by taking advantage of the notch characteristics of the widened partially dielectric‐filled AFSIW section. The lower stop band is determined by the cut‐off characteristic of the intermediate AFSIW between the back‐to‐back transitions. The relationship between the band‐pass response and the dimensional parameters of the transition is investigated. A prototype is designed, manufactured and measured. The measured fractional bandwidth (FBW) is 57.63% centered at 14.75 GHz. The suppression over 20 ~ 25 GHz is better than 25 dB, and a transmission zero with a suppression of 51.7 dB is introduced at 1 GHz away from the upper‐edge frequency of the pass band.