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A millimeter‐wave scalable small‐signal modeling approach based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz
Author(s) -
Zhu Guiqiang,
Chang Chen,
Xu Yuehang,
Zhang Ziheng,
Alsaman Amgad A.,
Lin Fujiang
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32404
Subject(s) - high electron mobility transistor , scalability , scaling , extremely high frequency , optoelectronics , and gate , materials science , millimeter , logic gate , equivalent circuit , electronic engineering , signal (programming language) , transistor , computer science , electrical engineering , physics , engineering , mathematics , optics , telecommunications , voltage , geometry , database , programming language
A new scalable small‐signal model for 0.1 μm AlGaN/GaN HEMT up to 110 GHz is presented in this paper. The taps between the gate/drain manifold and fingers on the device has been investigated and included in the equivalent circuit. In addition, to ensure high scalability, a set of scaling rules are presented. A novel extraction procedure for extrinsic capacitances using full‐wave electromagnetic (FW‐EM) method has been introduced along with corresponding structures used for EM simulation. The nonlinear dependence of the extrinsic inductances on the gate‐width has been accounted for by a new scaling rule, which can be used to extract their value from measurement data. To guarantee the stability of the scaling coefficients, two devices with different gate‐width have been utilized for their generation. The proposed scalable model has been verified using 0.1 μm AlGaN/GaN HEMT devices with different gate‐widths and different gate‐fingers. The experiment results show good agreement between model and measurement S‐parameters up to 110 GHz.