Premium
Highly linear fundamental up‐converter in InP DHBT technology for W‐band applications
Author(s) -
Hossain Maruf,
Stoppel Dimitri,
Boppel Sebastian,
Heinrich Wolfgang,
Krozer Viktor
Publication year - 2020
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32357
Subject(s) - linearity , dbm , bandwidth (computing) , sideband , materials science , electrical engineering , optoelectronics , power consumption , power (physics) , engineering , physics , telecommunications , radio frequency , cmos , amplifier , quantum mechanics
A fundamental up‐converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP‐DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 ± 1 dB within the frequency from 82 to 95 GHz with a saturated output power of −1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up‐converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW.