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An ultra‐wideband power amplifier with band notched response
Author(s) -
Chen Hui,
Shi XianQing
Publication year - 2020
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32302
Subject(s) - stopband , amplifier , passband , ultra wideband , rf power amplifier , electrical engineering , wideband , dbm , direct coupled amplifier , materials science , electronic engineering , engineering , band pass filter , operational amplifier , cmos
Abstract An ultra‐wideband (UWB) power amplifier (PA) integrated with notched structure is proposed in this letter. During the design process of the amplifier, a codesign approach was adopted, which realized an UWB band‐pass filter as the matching network, and a transmission zero was introduced within the passband to eliminate an interference to other radio systems. An example of band notch centered at 2.4 GHz was demonstrated in the PA. The measured results of the UWB amplifier are shown that 50% to 68% drain efficiency, 39.6 to 42.6 dBm output power, and higher than 10 dB power gain at the frequency range of 0.8 to 2.15 and 2.5 to 3 GHz are achieved. In addition, there is an obvious stopband of 2.2 to 2.4 GHz, and the minimum gain and output power in the stop band are 0.22 dB and 23 dBm, respectively.