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Effect of time relaxations on the carrier heating of InAs/GaAs quantum dot semiconductor optical amplifier
Author(s) -
Flayyih Ahmed H.,
Mohammed Firas S.,
AlKhursan Amin H.
Publication year - 2021
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32254
Subject(s) - quantum dot , materials science , optoelectronics , wetting layer , carrier lifetime , excited state , relaxation (psychology) , current (fluid) , semiconductor , absorption (acoustics) , condensed matter physics , atomic physics , physics , silicon , psychology , social psychology , composite material , thermodynamics
Abstract Carrier temperature in InAs quantum dot (QD) optical amplifiers has been formalized theoretically by using the double‐excited states system. High current injection gives high carrier temperature and a punch in the curve appears at low current due to the ground state carrier contribution. Increasing carrier‐heating time increased carrier temperature. It is shown the slow relaxation for both the wetting layer to QD and the interdot relaxations are given high carrier temperature. Pulses with wide full width at half‐maximum give high carrier temperature since its recovery time is increased. Free carrier absorption gives a main contribution to the heat in the QD structure.