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Oscillations up to terahertz frequency in resonant tunneling diodes
Author(s) -
Feng Wei
Publication year - 2020
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32174
Subject(s) - terahertz radiation , resonant tunneling diode , quantum tunnelling , oscillation (cell signaling) , diode , optoelectronics , doping , transient (computer programming) , voltage , diffusion , materials science , physics , optics , chemistry , quantum well , computer science , quantum mechanics , laser , biochemistry , operating system
We investigate the THz current oscillations in resonant tunneling diodes (RTD) oscillators with the transient drift‐diffusion model. The oscillation frequencies have a strong dependence on the biased voltage and doping concentration. With proper biased voltage and doping concentration, the high frequency up to THz can be obtained. The simulations are helpful to deepen the understanding of physical mechanism and guide to improve the performances of RTDs and RTD oscillators. The investigations make RTDs promising candidates as THz sources at room temperature.