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A 300 GHz power‐combined frequency doubler based on E ‐plane 90°‐hybrid and Y‐junction
Author(s) -
Ding JiangQiao,
Maestrini Alain,
Gatilova Lina,
Shi ShengCai
Publication year - 2020
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32146
Subject(s) - frequency multiplier , electrical engineering , chip , schottky diode , optoelectronics , bandwidth (computing) , power (physics) , engineering , optics , materials science , electronic engineering , physics , telecommunications , diode , cmos , quantum mechanics
In this article, a 300 GHz power‐combined frequency doubler using two chips in a single waveguide block is developed to acheive high power handling capability. Each doubler chip integrated with six diodes on a 5‐μm‐thick GaAs membrane is manufactured by the LERMA‐C2N Schottky process. In the power combining architecture, the input wave is split into two paths with a 90° relative phase shift by using a 90° hybrid coupler, and the in‐phase E ‐field power combining between the output ports is provided by an E ‐plane Y‐junction. This doubler can enjoy comparable performance of bandwidth and efficiency as the single‐chip version except with the twice input power handling. Partial results including ~8 mW output power and ~15% efficiency have been delivered in the band of 260‐310 GHz when pumping with 20‐60 mW input power, which indicates that this dual‐chip doubler can work availably. Such E ‐plane power‐combined doubler can be further served to drive high‐power terahertz multiplier chains, and also pump multipixel heterodyne detectors.