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A differential class‐E power amplifier with dynamic body bias technique
Author(s) -
Du JianChang,
Wang ZhiGong,
Xu Jian,
Chen Xi,
Qin TangZhen
Publication year - 2020
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.32041
Subject(s) - amplifier , power added efficiency , electrical engineering , transistor , differential amplifier , power (physics) , cmos , rf power amplifier , electronic engineering , dbm , differential (mechanical device) , engineering , physics , voltage , quantum mechanics , aerospace engineering
A fully differential class‐E power amplifier (PA) for wireless body area network applications is presented in this article. A novel dynamic self‐adapting body bias (DSBB) technique is introduced to improve the switch‐on transition and on‐resistance characteristics of MOS transistors. The proposed circuit is fabricated in the TSMC 0.18‐μm RF CMOS process. Measurement results show that the DSBB PA achieves a power‐added efficiency (PAE) of 46.9% with an output power of 13.1 dBm at 900 MHz. Compared to the conventional body‐ground connection PA, PAE and output power are improved more than 6.6% and 4.2 mW, respectively.