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Wide frequency switchable microwave resonator by injecting eutectic gallium indium into microfluidic defected ground structure
Author(s) -
Kim Yelim,
Lim Daecheon,
Park Euiyong,
Tentzeris Manos M.,
Lim Sungjoon
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31896
Subject(s) - resonator , materials science , microwave , indium , microfluidics , optoelectronics , gallium , liquid metal , eutectic system , inductance , acoustics , electrical engineering , nanotechnology , engineering , physics , telecommunications , voltage , composite material , metallurgy , alloy
This article proposes a frequency switchable microwave resonator based on a microfluidic defected ground structure (m‐DGS) that provides wider frequency tuning ratio. Because its resonant frequency is determined from the DGS geometry, the resonant frequency can be switched by injecting EGaIn liquid metal into the m‐DGS to decrease the effective inductance and hence increase resonant frequency to 7.7 GHz from 3 GHz, that is, 88% tuning range. The proposed idea is demonstrated numerically and experimentally.