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A 22‐37 GHz low noise amplifier with 2.8 dB mean noise figure and +22.9 dBm output 3rd‐order intercept point for 5th generation applications
Author(s) -
Ma Qian,
Xiang Yuanjiang
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31845
Subject(s) - noise figure , cascode , low noise amplifier , wideband , electrical engineering , balun , amplifier , cmos , electronic engineering , engineering , bandwidth (computing) , telecommunications , antenna (radio)
This paper presents a wideband 22‐37 GHz low noise amplifier (LNA) realized in a 0.25 μm SiGe BiCMOS technology. The design incorporates additional noise matching between the cascode transistors to minimize the noise figure (NF) degradation. The second stage incorporates an active balun architecture with a tail inductor to improve the common‐mode rejection ratio (CMRR). To extend the bandwidth, a capacitive feed forward path is added at the second stage. The LNA presents a minimum in‐band NF of 2.3 dB from 22‐37 GHz. The achieved 3 dB‐gain bandwidth is larger than 15 GHz, with a peak gain of 20.8 dB at 28 GHz. The output 3rd‐order intercept point (OIP3) is +22.9 dBm for a total power consumption of 94 mW. The area of the core circuit is 0.35 × 0.47 mm 2 . To the author's knowledge, the LNA shows the best overall performance compared to the existing silicon‐based LNAs.