Premium
Study on Ge/GeSn double heterojunction vertical cavity surface emitting laser enabled by ultra‐injection technique
Author(s) -
Lifeng Zhang,
Bin Shu,
Huiyong Hu,
Liming Wang,
Yvlong Gao,
Zehua Wang,
Litao Zhang
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31801
Subject(s) - materials science , optoelectronics , laser , vertical cavity surface emitting laser , heterojunction , distributed bragg reflector , optics , photoelectric effect , layer (electronics) , nanotechnology , wavelength , physics
A Ge/GeSn/Ge double heterojunction p‐i‐n vertical cavity surface emitting laser (VCSEL) is designed in this paper. According to the principle of distributed Bragg reflection (DBR), 6 and 12 pairs of SiO 2 /Si layers as the DBR are prepared on the upper and lower sides of the p‐i‐n structure. The upper and lower DBRs, as the resonant cavity of the laser, replace the Fabry Perot (FP) cavity of the conventional laser. The effects of Sn component and the ultra‐injection technique on the performance of the device are introduced at the same time to realize the direct bandgap luminescence of GeSn in the case of lower Sn component. The level of ultra‐injection is adjusted by changing the thickness of the i‐layer. The relationship between the thickness of the i‐layer and the carrier distribution after energization, the illuminating power, and the threshold current density are analyzed, and the best photoelectric performance is obtained.