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An S‐ to Ku‐wideband low‐noise amplifier using asymmetric π filter and shunt‐peaking technique with simultaneous input match and noise flatness
Author(s) -
Jing Kai,
Yu Ningmei,
Quan Xing
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31778
Subject(s) - low noise amplifier , noise figure , heterojunction bipolar transistor , shunt (medical) , wideband , electrical engineering , amplifier , electronic engineering , effective input noise temperature , bicmos , bipolar junction transistor , physics , transistor , engineering , optoelectronics , materials science , cmos , voltage , medicine , cardiology
A single‐stage S to Ku band (2‐18 GHz) low noise amplifier (LNA) employing asymmetric π input match network and inductive shunt‐peaking technique in 0.18 μm SiGe BiCMOS is presented. Shunt‐shunt feedback is utilized to ensure wide operating as well as form a noise suppression topology. With the process of SiGe heterojunction bipolar transistor (HBT) featuring f T / f max of 240/280 GHz, the measurement of the proposed LNA results in S 11 below −10 dB, S 21 of 19.6 ± 0.8 dB and 2.2‐3.2 dB noise figure (NF) from 2 to 18 GHz, drawing 9 mA DC current from a 3.3 V supply.