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A compact W‐band mixer‐first receiver in 65 nm CMOS
Author(s) -
Nam Hyohyun,
Go DongSik,
Park JungDong
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31760
Subject(s) - balun , superheterodyne receiver , noise figure , electrical engineering , cmos , intermediate frequency , frequency mixer , amplifier , chip , bandwidth (computing) , low noise amplifier , local oscillator , physics , engineering , radio frequency , telecommunications , antenna (radio)
We present a compact W‐band mixer‐first receiver consisting of a passive single‐balanced mixer, on‐chip balun, and a variable gain amplifier with 1.9 GHz of bandwidth over a gain range of 36 dB in 65 nm CMOS. The W‐band front‐end has been implemented aiming at a compact frequency‐modulated continuous‐wave (FMCW) radar as a proximity sensor, and a down‐converting chain for a total power radiometer combined with external low noise amplifier. The measured gain of the W‐band receiver is 25 dB, and the receiver achieves 2.57 dBm of IIP3. The integrated receiver consumes 14.56 mA from a supply voltage of 1.2 V, and the core chip occupies only 0.39 mm 2 .