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28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems
Author(s) -
Ahn Hyun Jun,
Chang Won Il,
Kim Seung Min,
Park Bok Ju,
Yook Jong Min,
Eo Yun Seong
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31669
Subject(s) - electrical engineering , rf front end , front and back ends , noise figure , high electron mobility transistor , low noise amplifier , monolithic microwave integrated circuit , insertion loss , radio frequency , engineering , electronic engineering , cmos , amplifier , transistor , voltage , mechanical engineering
This article presents a 28 GHz switch and LNA chipset, and the RF front‐end module for 5G communication systems. The 28 GHz Single Pole Double Through (SPDT) switch and LNA MMICs are embedded in single RF front‐end module successfully using molding based embedded Wafer‐Level Package (eWLP) technology. For the low noise figure and high isolation, inductive source degenerated LNA topology and double shunt FET structure for SPDT switch are employed, and LNA and SPDT are implemented in single IC. The eWLP based package minimizes the parasitic component such as bond‐wire inductance and signals loss to enhance the performance of the RF front‐end module. At 28 GHz, the measured gain and noise figure of receiver path are 15.5 dB and 3.46 dB, respectively, and the IIP3 is +3 dBm at 45 mW power consumption.