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Large current nanosecond pulse generating circuit for driving semiconductor laser diode
Author(s) -
Wen Shaocong,
Wang Mao,
Xie Jie,
Wu Dongmin
Publication year - 2019
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31654
Subject(s) - materials science , optoelectronics , laser , pulse width modulation , step recovery diode , driver circuit , diode , laser diode , pulse (music) , nanosecond , signal edge , semiconductor laser theory , transistor , injection seeder , optics , voltage , electrical engineering , physics , engineering , schottky diode , digital signal processing , analog signal
The semiconductor laser diode SPL LL90_3, which integrates the RC charge‐discharge circuit and a MOSFET switching device, is usually used for pulsing laser in the light detection and ranging system with a rated peak power of 70 W at 30 ns pulse‐width. To further increase the peak power and reduce the pulse width and rising edge, a driving circuit with an avalanche transistor used as a pre‐switching device is proposed. A trigger pulse with about 10 ns’‐pulse‐width is obtained to drive the laser diode. At the same time, the pulsing laser's peak power can reach 141 W at the testing repetition rate of 55 kHz.
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