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Design of high‐power W ‐band push‐push oscillators using load‐pull technique
Author(s) -
Choe Wonseok,
Jeong Jinho
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31480
Subject(s) - dbc , electrical engineering , phase noise , oscillation (cell signaling) , high electron mobility transistor , transistor , power (physics) , active load , physics , offset (computer science) , load pull , electrical impedance , input impedance , optoelectronics , engineering , voltage , computer science , genetics , quantum mechanics , biology , programming language
New design method of push‐push oscillators is proposed using harmonic load‐pull simulation to determine optimum load impedances at both fundamental ( f 0 ) and second harmonic frequencies (2 f 0 ). It allows high output power at 2 f 0 while meeting oscillation condition at f 0 . In addition, the compact self‐biasing source feedback is proposed using coupled line for negative resistance generation. The proposed method is applied to the design of W ‐band high power push‐push oscillator using 0.15 μm GaAs pseudo‐morphic high electron mobility transistors (pHEMTs) with typical maximum oscillation frequency ( f max ) of 180 GHz. The measurement shows an output power of 2.2 dBm at 92.3 GHz with a phase noise performance of −84 dBc/Hz at 1 MHz offset frequency. This result corresponds to relatively high output power at this frequency compared with reported oscillators using GaAs HEMTs with higher f max 's.