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Extraction of device S‐parameters within board by using a TRL de‐embedding technique
Author(s) -
Hamze Kassem,
Pasquet Daniel,
Descamps Philippe,
De Ledinghen Edouard
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31473
Subject(s) - embedding , calibration , electronic engineering , extraction (chemistry) , engineering , computer science , artificial intelligence , mathematics , chemistry , chromatography , statistics
Semiconductor devices are tested within a complex environment including a loadboard and a socket. In this paper, we propose a calibration methodology and a RF de‐embedding technique that allows the extraction of the device parameters. This method is based on the utilization of several calibration elements inspired by the TRL method. This study has been applied on an active device and the results have been validated using a real test solution.