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Analysis of tunneling field‐effect transistor with germanium source junction using small‐signal equivalent circuit
Author(s) -
Jung Yung Hun,
Kang In Man,
Cho Seongjae
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31438
Subject(s) - quantum tunnelling , transistor , optoelectronics , germanium , capacitance , field effect transistor , materials science , electrical engineering , tunnel field effect transistor , signal (programming language) , power (physics) , engineering , electrode , physics , voltage , computer science , silicon , programming language , quantum mechanics
In this study, germanium is used as the source junction material in a tunneling field‐effect transistor (TFET) and the Ge‐source TFET is analyzed in the perspectives of high‐frequency performances. For analyses on the high‐frequency parameters, a small‐signal equivalent circuit with high credibility and device simulation are operated in cooperation. The errors in capacitances and transconductances, from both approaches, are within 10% up to the terahertz regime. It is found that the Ge‐source TFET has smaller gate‐to‐drain capacitance and tunneling resistance than Si‐source device. These features merit make Ge‐source TFET more suitable to wide variety of high‐speed and low‐power applications.