Premium
An 4.7 GHz low‐power cross‐coupled GaN HEMT oscillator
Author(s) -
Jang ShengLyang,
Su YenJung,
Lin Ke Jen,
Wang BingJie
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31376
Subject(s) - high electron mobility transistor , voltage controlled oscillator , dbc , phase noise , vackář oscillator , amplifier , electrical engineering , digitally controlled oscillator , pierce oscillator , optoelectronics , variable frequency oscillator , materials science , voltage , physics , transistor , engineering , cmos
A GaN HEMT oscillator implemented with the WIN 0.25 μm GaN HEMT technology is designed. The oscillator consists of two HEMT amplifiers with cross‐coupled feedback topology. With the supply voltage of VDD = 0.4 V, the GaN VCO current and power consumption of the oscillator are 6.673 mA and 2.669 mW, respectively. The oscillator can generate differential signal at 4.7 GHz and it also supplies output power − 5.3 dBm. At 1 MHz frequency offset from the carrier the phase noise is −121.77 dBc/Hz. The die area of the GaN HEMT oscillator is 2 × 1 mm 2 .