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P‐substrate InP‐based 1.5 μm lasers using an internal carbon‐doped layer to block p‐dopant diffusion
Author(s) -
Duggan Shane P.,
Yang Hua,
Kelly Niall P.,
Caro Ludovic,
Dernaika Mohamad,
Shayesteh Maryam,
Gocalinska Agnieszka,
Thomas Kevin,
Pelucchi Emanuele,
Corbett Brian,
Peters Frank H.
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31364
Subject(s) - dopant , materials science , substrate (aquarium) , laser , optoelectronics , doping , diffusion , layer (electronics) , capacitance , carbon fibers , semiconductor laser theory , optics , nanotechnology , semiconductor , electrode , chemistry , composite material , physics , geology , composite number , oceanography , thermodynamics
P‐substrate AlGaInAs/InP lasers are enabled using an internal carbon‐doped layer to block Zn‐diffusion. These inverted lasers are developed for the aim of further monolithic vertical integration with passive or active material, which would allow full system on‐chip integration. The lasers emit at 1.5 μ m making them ideal for telecommunication applications. Different p‐substrate laser designs were grown to quantify the effect the carbon doped layer had on blocking Zn p‐dopants diffusion, which permits the long growths necessary for vertical integration. Current, voltage, and capacitance measurements were used to examine the different laser designs, proving that Zn p‐dopant diffusion is responsible for p‐substrate laser failure.