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Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements
Author(s) -
Maafri Djabar,
Kazemi Esfeh Babak,
Saadi Abdelhalim,
Yagoub Mustapha C. E.,
Raskin JeanPierre
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31334
Subject(s) - cutoff frequency , figure of merit , radio frequency , oscillation (cell signaling) , capacitance , transistor , mosfet , cutoff , electrical engineering , optoelectronics , materials science , electronic engineering , physics , engineering , voltage , chemistry , electrode , biochemistry , quantum mechanics
This work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances ( R g , R s , R d ), the intrinsic conductances ( g m , g d ), and the input capacitance C gg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, the current gain cutoff frequency f T and the maximum oscillation frequency f max . It has been shown that both the proposed method and the conventional RF extraction technique give quite close values.