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Thermally enhanced GaN hybrid‐IC power amplifier using embedded IC process in a copper sheet
Author(s) -
Yoon TaeWoong,
Kim DongSu,
Yook JongMin
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31333
Subject(s) - materials science , amplifier , printed circuit board , dissipation , electrical engineering , thermal management of electronic devices and systems , rf power amplifier , optoelectronics , power (physics) , electronic engineering , engineering , cmos , mechanical engineering , physics , quantum mechanics , thermodynamics
This article introduces new packaging that improves the heat dissipation of RF power devices. Typically, power devices are mounted on a printed circuit board, in which the heat dissipation is made only through the bottom area of a device. The heat dissipation of the proposed structure is made through the bottom and side areas. As a result, proposed technology provides 30% improved heat dissipation in the RF GaN power amplifier. A copper sheet having a high thermal conductivity of around 400 W/mK is used as a core material to embed the power device. The measured results show that the drain efficiency of the fabricated X‐band power amplifier (PA) improved by about 13% in the proposed package structure.