Thermally enhanced GaN hybrid‐IC power amplifier using embedded IC process in a copper sheet | Zendy

Yoon TaeWoong | Zendy; Kim DongSu | Zendy; Yook JongMin | Zendy

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Thermally enhanced GaN hybrid‐IC power amplifier using embedded IC process in a copper sheet

Author(s) -

Yoon TaeWoong,

Kim DongSu,

Yook JongMin

Publication year - 2018

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.31333

Subject(s) - materials science , amplifier , printed circuit board , dissipation , electrical engineering , thermal management of electronic devices and systems , rf power amplifier , optoelectronics , power (physics) , electronic engineering , engineering , cmos , mechanical engineering , physics , quantum mechanics , thermodynamics

This article introduces new packaging that improves the heat dissipation of RF power devices. Typically, power devices are mounted on a printed circuit board, in which the heat dissipation is made only through the bottom area of a device. The heat dissipation of the proposed structure is made through the bottom and side areas. As a result, proposed technology provides 30% improved heat dissipation in the RF GaN power amplifier. A copper sheet having a high thermal conductivity of around 400 W/mK is used as a core material to embed the power device. The measured results show that the drain efficiency of the fabricated X‐band power amplifier (PA) improved by about 13% in the proposed package structure.

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