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Q/V band LNA for satellite on‐board space applications using a 70 nanometers GaAs mHEMT commercial technology
Author(s) -
Ciccognani Walter,
Longhi Patrick E.,
Colangeli Sergio,
Limiti Ernesto
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31317
Subject(s) - wideband , noise figure , low noise amplifier , amplifier , communications satellite , electrical engineering , electronic engineering , impedance matching , noise (video) , satellite , engineering , chip , extremely high frequency , electrical impedance , computer science , telecommunications , cmos , aerospace engineering , artificial intelligence , image (mathematics)
Designing wideband low noise amplifiers (LNAs) at millimeter wave frequencies (>30 GHz) is rather challenging due to trade‐offs that need to be achieved between often contrasting goals such as noise figure, gain, impedance matching, stability, DC power consumption, and chip size. In this paper, a low noise design procedure at 50 GHz is presented, proving the feasibility of a 2 dB Noise Figure LNA at Q/V band. Such performance is enabling for future (but imminent) satellite communication systems operating in the 47‐52 GHz frequency band. Repeatability and reliability are key requirements for satellite operations and therefore an Industrial Grade—Space Qualified technology has been selected.