An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator | Zendy

Maricar Mohamed Ismaeel | Zendy; Khalid Ata | Zendy; Dunn Geoff | Zendy; Greedy Steve | Zendy; Thomas Dave | Zendy; Cumming David R. S. | Zendy; Oxley Chris H. | Zendy

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An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

Author(s) -

Maricar Mohamed Ismaeel,

Khalid Ata,

Dunn Geoff,

Greedy Steve,

Thomas Dave,

Cumming David R. S.,

Oxley Chris H.

Publication year - 2018

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.31312

Subject(s) - gunn diode , monolithic microwave integrated circuit , gallium arsenide , planar , optoelectronics , diode , microwave , materials science , electrical engineering , equivalent circuit , schottky diode , amplifier , engineering , voltage , computer science , telecommunications , cmos , computer graphics (images)

The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.

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