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An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator
Author(s) -
Maricar Mohamed Ismaeel,
Khalid Ata,
Dunn Geoff,
Greedy Steve,
Thomas Dave,
Cumming David R. S.,
Oxley Chris H.
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31312
Subject(s) - gunn diode , monolithic microwave integrated circuit , gallium arsenide , planar , optoelectronics , diode , microwave , materials science , electrical engineering , equivalent circuit , schottky diode , amplifier , engineering , voltage , computer science , telecommunications , cmos , computer graphics (images)
The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.