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Electronic circuit design for RF energy harvesting using 28 nm FD‐SOI technology
Author(s) -
Awad M.,
Benech P.,
Duchamp J. M.
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31157
Subject(s) - voltage doubler , electrical engineering , frequency multiplier , silicon on insulator , circuit design , voltage , transistor , optoelectronics , electronic engineering , diode , engineering , energy harvesting , materials science , physics , energy (signal processing) , cmos , voltage divider , dropout voltage , silicon , quantum mechanics
In this article, a voltage doubler circuit designed using 28 nm FD‐SOI technology has been studied for electromagnetic energy harvesting. NLVT transistor type is chosen and used as a diode for the realization of a Dickson voltage doubler circuit. Moreover, the impact of back gate polarization on circuit performance has been analyzed. The optimization of the circuit along with the measurement results has been presented (1.19 V for 1 stage at −26.3 dBm @ 2.45 GHz).