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Temperature‐dependent characteristics of a RTD ‐based microwave push‐push oscillator
Author(s) -
Lee Kiwon,
Jeong Yongsik
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.31060
Subject(s) - resonant tunneling diode , microwave , oscillation (cell signaling) , harmonic oscillator , harmonic , diode , electrical engineering , physics , quantum tunnelling , power (physics) , vackář oscillator , optoelectronics , voltage controlled oscillator , voltage , chemistry , engineering , quantum mechanics , laser , biochemistry , quantum well
In this letter, the temperature dependence of a microwave push–push oscillator based on a resonant tunneling diode (RTD) has been investigated from 30°C to 80°C. An output power characteristic curve of the second‐harmonic RTD oscillator has been shifted to the higher bias voltages as temperature increases. An oscillation frequency shift of Δ f OSC has been obtained to be –9.8 MHz/K which is equivalent to the Δ f OSC of –4.9 MHz/K at the fundamental oscillation frequency of 14.45 GHz. To authors’ knowledge, this is the first report on the temperature dependent characteristics of the second‐harmonic push–push RTD oscillator.