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An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices
Author(s) -
Maafri Djabar,
Saadi Abdelhalim,
Slimane Abdelhalim,
Yagoub Mustapha C. E
Publication year - 2018
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30982
Subject(s) - high electron mobility transistor , equivalent circuit , electrical element , small signal model , signal (programming language) , electronic engineering , materials science , optoelectronics , electrical engineering , engineering , transistor , computer science , voltage , programming language
To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent circuit consists of two parasitic distributed interelectrode extrinsic capacitances and two additional feedback intrinsic resistances. The circuit element values were obtained starting from measured S ‐parameters and using Y ‐matrix transformations. The efficiency of the proposed methodology was demonstrated through excellent agreement between simulated and measured data up to 60 GHz.