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Characterization of a self‐aligned RTD using a SiNx sidewall process for high‐speed applications
Author(s) -
Lee Kiwon,
Lee Hoyeon,
Lee Jongwon
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30875
Subject(s) - materials science , common emitter , resonant tunneling diode , thermionic emission , optoelectronics , diode , microwave , dry etching , quantum tunnelling , equivalent series resistance , characterization (materials science) , voltage , etching (microfabrication) , nanotechnology , electrical engineering , engineering , optics , quantum well , electron , layer (electronics) , telecommunications , laser , physics , quantum mechanics
In this article, an InP‐based self‐aligned resonant‐tunneling‐diode (RTD) using a SiN X sidewall process has been fabricated and characterized for high‐speed microwave applications. A plasma‐enhanced dry‐etch technique has been used to form a vertical emitter mesa. The measured peak currents are almost constant at a peak voltage due to negligible thermionic emission in a wide temperature range up to 125°C. The extracted series resistance of the fabricated self‐aligned RTD is 14.5 Ω, which is reduced by 27% compared with that of the nonself‐aligned RTD by reducing the spacing between emitter mesa and collector metal. To the best of authors’ knowledge, this is the first attempt to characterize a self‐aligned RTD using the dry‐etched mesa and the SiN X sidewall structure.