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Modeling of field dependent Maxwell‐Wagner interfacial capacitance for bilayer metal‐insulator‐metal capacitors
Author(s) -
Kannadassan D.,
Mallick P. S.
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30865
Subject(s) - capacitor , capacitance , bilayer , materials science , metal insulator metal , optoelectronics , electronic circuit , voltage , insulator (electricity) , electrical engineering , parasitic capacitance , electronic engineering , electrode , physics , engineering , chemistry , biochemistry , quantum mechanics , membrane
In this letter, we have presented the modeling of field dependent Maxwell‐Wagner interfacial capacitance for bilayer metal‐insulator‐metal (MIM) capacitors. The model was verified with measured capacitance‐voltage characteristics of fabricated bilayer Al 2 O 3 /TiO 2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10 kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.