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A V‐band high dynamic range planar integrated power detector: Design and characterization process
Author(s) -
Hannachi C.,
Zouggari B.,
Cojocaru Razvan I.,
Djerafi T.,
Tatu S. O.
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30809
Subject(s) - detector , schottky diode , materials science , microstrip , dynamic range , responsivity , optoelectronics , microwave , planar , bandwidth (computing) , extremely high frequency , impedance matching , broadband , electrical impedance , diode , electronic engineering , electrical engineering , optics , engineering , computer science , physics , telecommunications , photodetector , computer graphics (images)
Abstract In this paper, a high dynamic range V‐band power detector designed in thin film Miniature Hybrid Microwave Integrated Circuit (MHMIC) process is presented and characterized. The commercially available HSCH‐9161 millimeter‐wave zero bias GaAs Schottky diode is selected to manufacture the proposed power detector circuit, along with a broadband rectangular WR12 waveguide to microstrip transition, and an optimized microstrip impedance matching network. The design and characterization steps are described in detail to provide a consistent methodology to design high‐performance power detectors, while taking into account the accuracy, nonlinearity, and limitation of the measurement devices. The fabricated power detector prototype exhibits good input impedance matching (bandwidth of 3.8 GHz), high operational stability over 58.5–62 GHz frequency range, excellent sensitivity (−48 dBm), and high detection responsivity (peak of 8250 mV/mW at 61.2 GHz).