Premium
Advanced RF CMOS power amplifier with a monolithic high‐ Q transformer on a thick laminated organic layer
Author(s) -
Kim SeongRyul,
Park Changkun,
Yook JongMin
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30633
Subject(s) - transformer , amplifier , electrical engineering , materials science , cmos , rf power amplifier , optoelectronics , electronic engineering , engineering , voltage
We propose a new transformer structure for output matching networks to improve the power‐added efficiency (PAE) of CMOS power amplifiers (PAs). To minimize the effects of a lossy silicon substrate, the transformer is realized on a very thick organic layer which is formed by lamination process. The maximum available gain of the transformer is improved from −1.23 to −0.68 dB as the insulator thickness is changed from 3 to 60 μm. As a result, the PAE of the proposed CMOS PA with the proposed monolithic high‐Q transformer shows a maximum output power of 24.98 dBm with a 30.49% PAE at 2.4 GHz.