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A wideband common‐gate CMOS LNA employing complementary MGTR technique
Author(s) -
Guo Benqing,
Chen Jun
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30601
Subject(s) - wideband , cmos , pmos logic , common gate , linearity , nmos logic , noise figure , transistor , electrical engineering , electronic engineering , capacitor , amplifier , low noise amplifier , bandwidth (computing) , materials science , voltage , engineering , telecommunications
A wideband capacitor cross‐coupled common‐gate low‐noise amplifier (CGLNA) featured with high gain, low noise, and enhanced linearity is proposed. The linearity is enhanced by complementary multi‐gated transistor (CMGTR) technique. The bulk voltage and scaling size of auxiliary transistors are tuned to shift the distortion coefficients, compensating the nonlinearity of main transistors. In addition, the current reuse by stacked PMOS/NMOS configuration reduces power consumption while guaranteeing the input matching. A prototype is implemented in a 0.18 μm RF CMOS process. The measurement shows a maximal voltage gain of 19.5 dB, an average noise figure (NF) of 2.1 dB, and an input‐referred third‐order intercept point (IIP3) of 8.3–10 dBm over a 3 dB bandwidth of 0.2–1.6 GHz, respectively. It consumes only 3.5 mA from a 2.2 V supply.