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Noise figure improvement by controlling wiring effects in RF low noise amplifiers
Author(s) -
Jhon HeeSauk,
Jeon Jongwook,
Kang Myunggon
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30555
Subject(s) - noise figure , electrical engineering , low noise amplifier , amplifier , cmos , noise (video) , microwave , radio frequency , noise figure meter , engineering , electronic engineering , optoelectronics , materials science , telecommunications , computer science , artificial intelligence , image (mathematics)
In this letter, we evaluate the noise figure (NF) improvement that results from controlling the parasitic gate resistance of a radio‐frequency (RF) low noise amplifier (LNA). By optimizing the number of gate contacts and wiring modifications in our fabricated device, the customized layout exhibited an approximately 25% reduction in the gate electrode resistance (R elect ) when compared to a reference device provided by the foundry. The fabricated LNA, which used a customized layout in a 0.18 μm standard CMOS process, improved the NF by almost 6% without affecting the Si area and DC power consumption, and exhibited a NF of 2.57 dB, gain of 11.6 dB, DC power dissipation of 4.0 mW, and return loss at both the input and output of more than 10 dB. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1405–1407, 2017