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A 4.2/7.2 G H z dual‐band LC VCO in 0.13 mm S i G e B i CMOS
Author(s) -
Feng Weiwei,
Li Xiuping,
Zhu Hua
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30554
Subject(s) - voltage controlled oscillator , dbc , phase noise , electrical engineering , inductor , multi band device , microwave , bicmos , materials science , offset (computer science) , optoelectronics , capacitor , chip , lc circuit , voltage , engineering , transistor , telecommunications , computer science , antenna (radio) , programming language
This article presents a dual‐band LC voltage switched oscillator (VCO), which can be regulated between 3.6–4.5 GHz and 6.5–7.8 GHz frequency bands. The VCO is realized employing a tunable LC tank with switched capacitors, which makes the dual‐band operation available. The VCO has been implemented in 0.13 μm SiGe BiCMOS technology, and draws around 5 mA and 5.2 mA in the core circuit with a 1.6 V supply at 4.22 GHz and 7.3 GHz, respectively. The measured phase noise performance of the VCO are −103.36 dBc/Hz for 4.22 GHz and −104.69 dBc/Hz for 7.3 GHz at 3 MHz offset. The core area of the chip is 0.13 mm 2 based on the use of a symmetric inductor. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1439–1441, 2017