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A nonuniform distributed power amplifier in 0.18‐mm CMOS technology
Author(s) -
Zhang Ying,
Ma Kaixue,
Zhang Changchun,
Zhang Yi,
Guo Yufeng
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30551
Subject(s) - amplifier , cmos , impedance matching , electrical engineering , inductor , electrical impedance , power gain , power (physics) , chip , power added efficiency , engineering , electronic engineering , microwave , output impedance , materials science , rf power amplifier , telecommunications , physics , voltage , quantum mechanics
A nonuniform distributed power amplifier (DPA) is designed and implemented in a 0.18 μm CMOS technology. To achieve high output power and efficiency in the wide frequency band, the impedance matching of T‐type networks is analyzed and the tapered on‐chip inductors of the output artificial transmission lines are designed. Non‐uniform gain cells together with the tapered on‐chip inductors are used to improve the output power while maintaining the good input and output impedance matchings. The chip size of the DPA is only 1.16 × 0.57 mm 2 including testing pads. The proposed DPA achieves 8.7 dB average associated gain from 1 to 19 GHz. The output power at 1‐dB output compression point (OP 1dB ) is more than 7.6 dBm and the best power‐added efficiency (PAE) is 7.4% in the frequency band of 1–18 GHz. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1416–1420, 2017