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Miniaturized X/Ku‐band frequency doubler with high gain and optimized doubling‐core efficiency in 65 NM CMOS technology
Author(s) -
Oh HyunMyung,
Kim JaeSun,
Kim ChoulYoung
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30516
Subject(s) - balun , frequency multiplier , electrical engineering , amplifier , engineering , transformer , cmos , voltage doubler , inductor , electronic engineering , voltage , voltage divider , dropout voltage , antenna (radio)
In this paper, a miniaturized X/Ku‐band frequency doubler with a two stage amplifier using balanced topology is demonstrated. The circuit is fabricated using 65 nm CMOS technology and designed to operate from 11.6 to 13 GHz. The doubler is designed with an amplifier to maximize the efficiency of the doubling core and to ensure low input power. The transformer balun was conjoined as the input balun in the frequency doubler and the inductor in the amplifier. Therefore, the transformer balun reduces the circuit size. The frequency doubler exhibits a conversion gain of 13.4 dB at a 6 GHz input frequency and −15 dBm input power. The fundamental rejection is 30.6 dB at a 6 GHz input frequency. The proposed frequency doubler consumes power of 18 mW and occupies an area of 0.69 × 0.41 m m 2© 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1265–1267, 2017