Premium
Novel method to determine base resistance in sige HBT from small‐signal S ‐parameters measurement
Author(s) -
Sun Yabin,
Fu Jun,
Wang Yudong,
Zhou Wei,
Li Xiaojin,
Shi Yanling
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30341
Subject(s) - heterojunction bipolar transistor , base (topology) , signal (programming language) , range (aeronautics) , electronic engineering , electrical engineering , microwave , materials science , engineering , computer science , telecommunications , mathematics , transistor , voltage , mathematical analysis , bipolar junction transistor , composite material , programming language
A novel and robust method to determine the internal variable base resistance ( R B ) of SiGe HBT from small‐signal S ‐parameters measurement is developed in present work. The proposed method is adopted in two kinds of SiGe HBT compact models, MEXTRAM and HICUM. With the aid of auxiliary collector resistance, the lower and upper limits of R B are built up and a narrow variation range of R B is obtained. Thus, R B can be directly estimated from the small‐signal S ‐parameters measurement. The proposed method is successfully applied to several sizes of SiGe HBTs and the experiment results shows that average error between the lower and upper limits of R B is less than 3% over a wide range of bias points, which can satisfy the demands of most engineering applications. Therefore, we believe that the proposed technique is a reliable routine applicable to estimate the base resistance in SiGe HBTs. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:555–560, 2017