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Low‐IF noise characteristics of W‐band resistive and diode mixers
Author(s) -
Lee Seokchul,
Lee Sangho,
Kwon Youngwoo,
Jeong Jinho
Publication year - 2017
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30290
Subject(s) - flicker noise , frequency mixer , electronic mixer , resistive touchscreen , diode , high electron mobility transistor , optoelectronics , microwave , intermediate frequency , materials science , noise (video) , electrical engineering , noise figure , transistor , harmonic mixer , noise figure meter , linearity , radio frequency , engineering , amplifier , cmos , voltage , telecommunications , computer science , local oscillator , artificial intelligence , image (mathematics)
In this letter, W‐band mixers (resistive and diode mixers) are designed using a 0.15 μm GaAs pseudo‐morphic high electron mobility transistor process for frequency‐modulated continuous wave radars. The measurement shows that both mixers can achieve a good conversion gain of −9 dB with high linearity performance. In addition, noise figures (NFs) of both mixers are measured especially at low intermediate frequency (IF) using a gain method. The resistive mixer exhibits 10.3–11.2 dB lower NF than the diode mixer at low IF from 100 kHz to 1 MHz. This result is also supported by the measurement of the flicker noise of HEMT and diode at each operating bias condition. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:275–278, 2017
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