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A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source‐body and gate‐body configurations
Author(s) -
Ahn Jahyun,
Lee Seonghearn
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30166
Subject(s) - silicon on insulator , capacitance , microwave , materials science , equivalent circuit , electronic engineering , mosfet , optoelectronics , voltage , electrical engineering , engineering , transistor , physics , silicon , electrode , telecommunications , quantum mechanics
A direct extraction method is newly proposed to determine all extrinsic capacitances including the drain‐source coupling capacitance in a buried oxide layer of RF SOI MOSFETs. This new method is based on Y‐parameter equations derived from two “off” state equivalent circuits under common source‐body and gate‐body configurations. Using this method, the gate voltage‐dependent extrinsic capacitance data are extracted and small‐signal equivalent circuit modeling is accurately performed. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2851–2853, 2016