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Modeling a mim capacitor including series resistance and inductance for characterizing nanometer high‐ K dielectric films
Author(s) -
CortésHernández Diego M.,
ValderramaB René,
TorresTorres Reydezel,
Molina Joel
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30103
Subject(s) - capacitor , equivalent series resistance , dissipation factor , dielectric , materials science , parasitic element , microwave , inductance , series (stratigraphy) , high κ dielectric , permittivity , capacitance , nanometre , electronic engineering , electrical engineering , optoelectronics , composite material , physics , electrode , engineering , telecommunications , voltage , paleontology , quantum mechanics , biology
A model to represent the parasitic series resistance and inductance inherent to the capacitor plates is proposed. The model is used to determine the frequency‐dependent permittivity and loss tangent of high‐ k dielectrics (HfO 2 and Al 2 O 3 ) in metal‐insulator‐metal capacitors. Experimental results are in agreement with nominal values reported in the literature. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2599–2602, 2016