Modeling a mim capacitor including series resistance and inductance for characterizing nanometer high‐ K  dielectric films | Zendy

CortésHernández Diego M. | Zendy; ValderramaB René | Zendy; TorresTorres Reydezel | Zendy; Molina Joel | Zendy

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Modeling a mim capacitor including series resistance and inductance for characterizing nanometer high‐ K dielectric films

Author(s) -

CortésHernández Diego M.,

ValderramaB René,

TorresTorres Reydezel,

Molina Joel

Publication year - 2016

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.30103

Subject(s) - capacitor , equivalent series resistance , dissipation factor , dielectric , materials science , parasitic element , microwave , inductance , series (stratigraphy) , high κ dielectric , permittivity , capacitance , nanometre , electronic engineering , electrical engineering , optoelectronics , composite material , physics , electrode , engineering , telecommunications , voltage , paleontology , quantum mechanics , biology

A model to represent the parasitic series resistance and inductance inherent to the capacitor plates is proposed. The model is used to determine the frequency‐dependent permittivity and loss tangent of high‐ k dielectrics (HfO 2 and Al 2 O 3 ) in metal‐insulator‐metal capacitors. Experimental results are in agreement with nominal values reported in the literature. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2599–2602, 2016

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