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A WLAN CMOS power amplifier with insensitive bias circuits
Author(s) -
Joo Taehwan,
Hong Songcheol
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30050
Subject(s) - amplifier , cmos , electrical engineering , biasing , electronic circuit , rf power amplifier , power (physics) , electronic engineering , transistor , engineering , voltage , physics , quantum mechanics
A CMOS power amplifier (PA) for IEEE 802.11b/g/n/ac applications is presented, which is implemented with a 0.13‐µm standard RF CMOS process. Integrated bias circuits for the common source (CS) and common gate (CG) power transistors are proposed, which reduce the performance sensitivities of the PA according to the variations of the bias voltage and output power. Measurements show that the proposed power amplifier achieves 17.2 dBm output power with 8.1% PAE at −34 dB EVM with MCS8, 256QAM, 40 MHz, 802.11ac signal source. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2331–2334, 2016