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A high‐efficiency gan power amplifier with harmonic control based on Si‐IPDS
Author(s) -
Jin An Sung,
Min Yook Jong,
Woong Yoon Tae,
Kim Hyeok,
Chul Kim Jun,
Yook JongGwan,
Park Youngcheol,
Kim Dongsu
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.30003
Subject(s) - amplifier , monolithic microwave integrated circuit , power added efficiency , electrical engineering , rf power amplifier , direct coupled amplifier , harmonic , linear amplifier , fet amplifier , microwave , waveform , electronic engineering , energy conversion efficiency , power (physics) , voltage , engineering , materials science , optoelectronics , operational amplifier , physics , telecommunications , cmos , quantum mechanics
This article presents a high‐efficiency power amplifier using quasi‐MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate‐source voltage waveform control with Class‐F operation achieves significant efficiency improvements. The quasi‐MMIC technology using silicon‐integrated passive devices (Si‐IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class‐F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a P sat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2178–2182, 2016