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Characterization of high‐photocurrent and high‐speed INP‐based uni‐traveling‐carrier photodiodes at 1.55‐μm wavelength
Author(s) -
Meng Qianqian,
Wang Hong,
Liu Chongyang,
Gao Jianjun,
Tian Yang,
Siong Ang Kian,
Guo Xin,
Gao Bo
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29997
Subject(s) - photocurrent , photodiode , microwave , materials science , optoelectronics , characterization (materials science) , wavelength , doping , optics , range (aeronautics) , physics , engineering , telecommunications , nanotechnology , composite material
We demonstrate a semi‐analytical parameter extraction method to characterize high‐speed and high‐photocurrent InP‐based uni‐traveling‐carrier photodiodes with dipole‐doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2156–2162, 2016