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A high‐efficiency 60‐GHz indirect local oscillator in 90‐nm CMOS
Author(s) -
Byeon Chul Woo,
Park Chul Soon
Publication year - 2016
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.29981
Subject(s) - dbc , phase noise , cmos , microwave , electrical engineering , offset (computer science) , local oscillator , voltage controlled oscillator , optoelectronics , materials science , physics , engineering , telecommunications , computer science , voltage , programming language
This letter presents a highly efficient 60‐GHz local oscillator (LO) in a 90‐nm CMOS. The proposed LO consists a 30‐GHz LC VCO and a frequency doubler. With this topology, the LO generator has a high output power of −0.1 dBm at 58.2 GHz, consuming only 10.4 mW from a 0.8 V supply, resulting in a record efficiency of 9.4% among 60‐GHz CMOS LOs. At 58.2 GHz, the phase noise is −115 dBc/Hz at a 10‐MHz offset. The measured frequency tuning range is from 57.56 to 64.47 GHz. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2091–2093, 2016